Abstract
AbstractThe rigid nature of inorganic semiconductors makes them rarely use in flexible devices till now. For the first time, ductile‐metal Ag is used as buffering layer to bond the inorganic semiconductor thin films and polymer substrate forming a sandwich structure, which has outstanding flexible photoelectric character. The ductile thin Ag layer under Ag2S thin film acts as electrode and buffering material between the Ag2S and polyimide (PI) layers. The strong bonding interaction between Ag2S and Ag can reduce the stress force in Ag2S thin films that is generated during bending, which enhances its flexibility. The resulted Ag2S/Ag/PI film shows excellent electrical performance retentivity. After more than 104 cycles bending test, the conductivity of the Ag2S/Ag/PI films has almost not changed. The prepared Au/PEDOT:PSS/Ag2S/Ag/PI photodetectors are stable in air or N2. It can bear a small bending radius as low as 1.5 mm for ≈4000 bending cycles test without drastic performance decay. In addition, the Ag2S/Ag based flexible photodetectors show a wide spectral response from ultraviolet to near infrared.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
