Abstract
Fermi-level movement and interfacial chemistry for room-temperature and 80-K low-temperature Ag/InP(110) and Cu/InP(110) have been examined by use of photoelectron spectroscopy. Two different pinning positions (0.95 and 0.7 eV above the valence-band maximum), which are associated with either defects or metal-induced gap states (MIGS), are well correlated with the interfacial reaction. These results indicate that both MIGS and defects can pin the Fermi level and that the interplay between them should be taken into account.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
