Abstract
The mechanism of irreversible resistive switching (RS) conversion from bipolar to unipolar operation is investigated in a capacitor structure, SrZrO3/TiOx/Pt, prepared on a Pt/Ti/SiO2/Si substrate. Bipolar RS memory current–voltage characteristics are observed in the RS voltage window from +2.5 V to −1.9 V, which shows excellent durability and retention characteristics. As the voltage bias is increased to greater than +4 V, an additional forming process occurs, irreversibly converting the RS mode from the bipolar to the unipolar mode. In this study, two materials are combined with different switching mechanisms to enable the fabrication of RS memory with desirable characteristics in different current regions.
Highlights
Resistive switching random access memory (ReRAM) is expected to replace currently commercialized charge-based memories, i.e., dynamic random access memory (DRAM) and NAND flash memory, which have struggled to meet the challenges associated with physical scale-down limitations
Exhibits a relatively robust retention characteristic owing to the formation of conducting paths, which is essential for its performance as non-volatile memory (NVM)
The bipolar RS (BRS) observed in SrTiO3 (STO),18 SrZrO3 (SZO),19 Pr1−xCaxMnO3 (PCMO),20 Ni– Ti–O compounds,21 and WOx22 are often explained in terms of the interfacial effect between the oxide and electrode
Summary
The resistive switching (RS) phenomenon in various transitionmetal-oxide (TMO) thin films has attracted considerable attention due to its non-volatility, low-power consumption, simple chemical composition, and fast operation speed.1–5 Owing to these advantages, resistive switching random access memory (ReRAM) is expected to replace currently commercialized charge-based memories, i.e., dynamic random access memory (DRAM) and NAND flash memory, which have struggled to meet the challenges associated with physical scale-down limitations. The switching mode conversion of SZO/TiOx sandwiched between Pt electrodes was observed because the RS
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