Abstract
Permeable-base transistors have been fabricated on epitaxial silicon layers grown by low-pressure vapour-phase epitaxy. Reactive ion etching is used to form the grooved-etched transistors with 0.5-2 ?m-wide channels. The emitter geometry permits self-aligned formation of two separate base electrodes which can be useful in mixer applications. Measured gm values of 62 mS/mm are the highest yet reported for Si PBTs.
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