Abstract
The dual-directional silicon-controlled rectifier (DDSCR) is an electrostatic discharge (ESD) protection device. It can provide positive and negative ESD surge paths and has excellent robustness. However, industry-level sensors operating in strong electromagnetic interference environments impose higher reliability requirements on photoelectric chips. This paper proposed a novel DDSCR with a dual-gate controlled mechanism. By incorporating the gate diode triggering and the gate field modulation mechanism into the traditional DDSCR, and further utilizing additional parasitic bipolar junction transistors (BJTs) for diversion, the proposed device exhibits significantly improved ESD characteristics. Measurement results indicate that, compared to DDSCR, the proposed device exhibits a 27.5% reduction in trigger voltage (Vt1 ), a 96.1% improvement in holding voltage (Vh ), and achieves an equivalent human body model protection level of 11.45 kV, demonstrating exceptional design area efficiency. The experimental findings validate the effectiveness of the proposed device in 5 V photoelectric chip applications.
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