Abstract
We proposed and fabricated a metal-insulator-semiconductor-insulator-metal type dual-wavelength sensitive UV sensor by using an AlGaN/GaN hetero-structure layer epitaxially grown on a sapphire substrate and a thin Al2O3 layer inserted between AlGaN and Ni Schottky electrodes to reduce dark current and improve the UV/visible rejection ratio. The proposed sensor shows high photo-responsive current to both UV wavelength regimes with a significantly improved UV/visible rejection ratio under the regime of the GaN-related UV response. Cut-off wavelengths can be controlled by changing the bias below and above 10 V.
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