Abstract
A novel dual wavelength semiconductor laser is proposed and experimentally demonstrated. Stable dual wavelength lasing is established by the grating structure consisting of two asymmetric phase-shifts, which are distributed along the phase-arranging regions in the sampling pattern. The wavelength spacing between the two modes is about 0.51 nm at room temperature. A microwave signal at about 64 GHz can be generated by beating the two wavelengths. Based on the reconstruction-equivalent-chirp technique, the laser is fabricated by a low-cost manufacturing method.
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