Abstract
Using an external cavity consisting of an etalon and a mirror, dual-wavelength operation of a high-power broad-area multi-stripe diode laser is achieved. The reflection of the etalon is used as the output beam of the system. The free-running bandwidth of the laser diode is about 2.0 nm. At dual-wavelength operation, the bandwidth of each wavelength component is narrowed to about 0.07 nm, while the space between them is 1.65 nm, determined by the FSR of the etalon. We obtain an available dual-wavelength output power of 2.0 W at the drive current of 6.5 A. The power ratio of the components at two different wavelengths can be changed by changing the temperature of the diode laser. To tune the wavelength of the dual-wavelength output, the temperature of the laser diode and the tilt angle of the etalon are changed simultaneously
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