Dual solution synthesis of Al doped CuS thin films for optoelectronic and photovoltaic applications

Abstract

Dual Solution Synthesis (DSS) was used to deposit CuS doped with Al. The Samples were subjected to annealing under varying temperatures of 319K and 373K . The thin films were firmly adherent to the substrates. The optical properties were measured using UV -1800 series double beam spectrophotometer. The transmittance is from 0.3% to 0.6% while the reflectance is between 0.176 to 0.204, as the wavelength ranges from 320nm to 1000nm; the average band gap obtained is 2.6. The thicknesses achieved are 100nm and 124 nm. Other Optical properties were determined for each sample which makes it suitable for applications in optoelectronic, solar energy conversions, solar cells, thin film absorbers, anti- reflective coating, aesthetic windows, UV filter and other uses.