Dual Optimization of Bulk and Interface via the Synergistic Effect of Ligand Anchoring and Hole Transport Dopant Enables 23.28% Efficiency Inverted Perovskite Solar Cells

Abstract

The crystalline morphology of perovskite film plays a key role in determining the stability and performance of perovskite solar cells (PSCs). In addition, the work function and conductivity of hole transport layer (HTL) have a great influence on the effciency of PSCs. Here, we develop a synergistic doping strategy to fabricate high-performance inverted PSCs, doping a functional nanographene (C78-AHM) into the poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine (PTAA) HTL, thus forming an HTL with higher conductivity, lower roughness, and frontier energy levels matching the perovskite absorber work function. On this basis, thiosemicarbazide (TSC) was doped into the precursor solution of perovskite as the grain and interface modifier to further improve the crystalline morphology of perovskite film. Compared with the current single passivation method, this codoping strategy can simultaneously reduce the surface and bulk defects of perovskite film and reduce the interface energy barrier. Eventually, high-quality TSC-doped perovskite films based on C78-AHM-doped PTAA HTL are obtained with over 2 μm sized grains, pinhole-free, and improved crystallinity. As a result, this synergistic doping strategy increases the efficiency of the device from 20.27% to 23.28%. Furthermore, the environmental and thermal stabilities of the devices are significantly improved. Therefore, this work provides a simple way for the preparation of other efficient optoelectronic devices.