Abstract

We propose and experimentally demonstrate a dual-mode silicon ring resonator which could process TE <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0</sub> and TE <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1</sub> modes simultaneously. By introducing subwavelength grating into the coupling region, compact footprint of ∼90 μm × 20 μm is achieved. The proposed device is fabricated on the standard silicon-on-insulator platform. The measured results indicate the mode crosstalk within C band are less than −12.2 and −11.5 dB for TE <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0</sub> and TE <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1</sub> modes, respectively. Furthermore, heaters for resonant wavelength tuning are fabricated and measured with good uniformity for both modes.

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