Dual material gate doping-less tunnel FET with hetero gate dielectric for enhancement of analog/RF performance

Abstract

In this paper, charge-plasma-based tunnel FET is proposed by employing dual material gate with hetero gate dielectric technique and it is named hetero-dielectric dual material gate doping-less TFET (HD_DMG_DLTFET). It is compared with conventional doping-less TFET (DLTFET) and dual material gate doping-less TFET (DMG_DLTFET) on the basis of analog and RF performance. The HD_DMG_DLTFET provides better ON state current (), , and average subthreshold slope (). The proposed device offers low total gate capacitance (Cgg) along with higher drive current. However, with a better transconductance (gm) and cut-off frequency (fT), the HD_DMG_DLTFET can be a good candidate for RF circuitry. The early voltage (VEA) and output conductance (gd) are also moderate for the proposed device with comparison to other devices and therefore can be a candidate for analog devices. From all these simulation results and their study, it is observed that HD_DMG_DLTFET has improved analog/RF performance compared to DLTFET and DMG_DLTFET.