Dual Lumped Ports Technique and Its Applications in Modeling of Planar Schottky Diode in THz Band

Chengkai Wu,Ruimin Xu,Yuehang Xu,Yan Bo,Yong Zhang

doi:10.1109/access.2020.2973804

Abstract

Micro-coaxial probe technique (MCPT) is widely used in three-dimensional electromagnetic (3-D EM) modeling of planar Schottky barrier diodes (SBDs) for the design of terahertz multipliers and mixers. However, the inconsistency of port numbers between 3-D EM model and intrinsic model of diode has been pended for years due to the lack of alternative internal port techniques. In this paper, after investigating port techniques available for field simulation software, a novel dual lumped ports technique (DLPT) is proposed to replace the MCPT for removing its non-physical grounding requirement, which makes the defined internal ports have definite physical meaning. Moreover, the proposed DLPT possesses higher accuracy than MCPT for the elimination of epitaxial layer penetration and additional consideration of port coupling effect. Detail technical procedures for DLPT are presented for internal double ports implementation. To verify its feasibility and accuracy at terahertz band, a 110 GHz broadband tripler was designed utilizing the proposed DLPT and the measured results agree well with the simulated ones. Furthermore, a series of frequency multipliers designed by MCPT are post-analyzed with the same models derived from DLPT. Finally, a slight discrepancy is observed between MCPT and DLPT, and the latter coincides better with the measured results. All these results indicate that the proposed DLPT is validated to be effective and accurate for the design of diode frequency multipliers and mixers in terahertz region.

Highlights

Terahertz technology has great potential applications such as broadband communication, precision guidance, atmospheric physics, radio astronomy, object imaging, remote wireless sensing, biological spectroscopic instruments [1], [2]
The original 3-D EM models of diode established by Micro-coaxial probe technique (MCPT) were modified and replaced by the models based on dual lumped ports technique (DLPT) for comparison while other simulation conditions were kept unchanged
A. 110GHZ TRIPLER As shown in Fig. 13, a 110 GHz tripler based on a 4-anode diode chip arranged in series in the same direction was designed using the 3-D EM model established by MCPT

Summary

Introduction

Terahertz technology has great potential applications such as broadband communication, precision guidance, atmospheric physics, radio astronomy, object imaging, remote wireless sensing, biological spectroscopic instruments [1], [2]. Found in many terahertz components and systems, Schottky barrier diode (SBD) continues to be the most popular THz device. As a low-parasitic device that works well into terahertz region at roomtemperature, Schottky diodes can provide substantial capabilities of power generation, signal detection and frequency conversion for a range of practical THz applications [3]. The associate editor coordinating the review of this manuscript and approving it for publication was Yongle Wu. and frequency multipliers that work up to 2.7 THz [5] have been demonstrated successfully. Frequency multipliers that work up to 2.7 THz [5] have been demonstrated successfully The development of these components benefits from the advances of diode manufacturing technology [6], modeling technology [7], circuit design method [8] and block manufacturing technology [9]

Methods

Discussion

Conclusion