Abstract
A dual linearly-polarized (LP) high-order-mode antenna with high gain and high isolation is proposed for 5G millimeter-wave (mm-wave) applications. To obtain high gain and wide bandwidth, a 2 × 2 slot-fed magneto-electric (ME)-dipole antenna elements are excited by a high-order-mode TM430 cavity. Two substrate integrated waveguide (SIW) feeding networks that are vertically arranged in the bottom layers are employed to feed the high-order-mode cavity antenna for a double capacity, high isolation and low transmission loss. Moreover, an 8 × 8 antenna array is fed by a pair of compact modified H-shaped full-corporate SIW networks. Measurement results show that an overlapped frequency bandwidth of 14.6% (36.8-42.6 GHz) with a peak gain of 25.8 dBi and an isolation of greater than 45 dB for the 8 × 8 dual LP antenna array are achieved, which guarantee reliable high-speed data transmission and anti-interference capacity for 5G communications.
Highlights
Millimeter-wave spectrum that spans very wide bandwidth has been officially allocated as one of frequency resources for the fifth generation (5G) mobile communications [1]
Frequency bands of 37-42.5 GHz are relatively wider than other ones and are chosen as the high frequencies for mm-wave communications by Chinese Ministry of Industry and Information Technology [2]
As the stringent requirements such as high capacity, high-speed data transmission, and strong anti-interference ability need to be met for 5G communication system, where the antenna is a vital component that should be characterized by dual polarization, wide bandwidth, high gain and high isolation [3]
Summary
Millimeter-wave spectrum that spans very wide bandwidth has been officially allocated as one of frequency resources for the fifth generation (5G) mobile communications [1]. Compared with the previously proposed dual-polarized mm-wave antennas, the proposed antenna array can achieve both high gain (25.8 dBi) and high isolation (45 dB) in a wide frequency band (36.8-42.6 GHz) by using a simple structure, which ensures the reliable high-speed data transmission and antiinterference capacity for 5G communications. A rectangular notch (Wr1 × Lr1, in yellow) is etched on the bottom of the substrate for each input port of the whole feeding network It is used for inserting an input waveguide, namely, WR-22, whose working frequency band ranges from 33 to 50.1 GHz. Notably, by moving the vias in the middle connective band (in red), the widths of wide wall surrounding each input port (i.e., port 1) and each output port (i.e., port 2) are wider than the transmission waveguide, which helps to obtain good impedance matching. The measured results well comply with the simulated ones, and they show low X-pol level, high FBR, narrow HPBW and reasonable sidelobe level
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