Abstract
A dual lasing channel Terahertz Quantum Cascade laser (THz QCL) based on GaAs/Al0.17Ga0.83As material system is demonstrated. The device shows the lowest reported threshold current density (550A/cm2 at 50K) of GaAs/AlxGa1-xAs material system based scattering-assisted (SA) structures and operates up to a maximum lasing temperature of 144K. Dual lasing channel operation is investigated theoretically and experimentally. The combination of low frequency emission, dual lasing channel operation, low lasing threshold current density and high temperature performance make such devices ideal candidates for low frequency applications, and initiates the design strategy for achieving high-temperature performance terahertz quantum cascade laser with wide frequency coverage at low frequency.
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