Abstract
A regio-regular poly(3-hexylthiophene) (RRP3HT) thin film transistor having a split gate architecture has been fabricated on a doped silicon/silicon nitride substrate and characterized. This device demonstrates AND logic functionality. The device functionality was controlled by applying either 0 or −10V to each of the gate electrodes. When −10V was simultaneously applied to both gates, the device was conductive (on), while any other combination of gate voltages rendered the device resistive (off). The p-type carrier charge mobility was about 5×10−4cm2∕Vs. The low mobility is attributed to the sharp contours of the RRP3HT film due to substrate nonplanarity. A significant advantage of this architecture is that AND logic devices with multiple inputs can be fabricated using a single RRP3HT channel with multiple gates.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
