Dual in-plane-gate oxide-based thin-film transistors with tunable threshold voltage

Abstract

Dual in-plane-gate oxide-based thin-film transistors (TFTs) are self-assembled on SiO2-based solid-electrolytes by only one shadow mask. The unique feature of such TFTs is that indium-tin-oxide (ITO) channel and four ITO electrodes can be deposited simultaneously. Threshold voltage can be effectively tuned from −0.55 V to 0.76 V when the second in-plane gate bias switches from 3.0 V to −2.0 V. Such dual-gate TFTs exhibit a large current on/off ratio (>106) and a small subthreshold swing (<200 mV/decade). A model based on three gate capacitors is proposed to further understand the operation mechanism of such devices.