Dual‐Gate Graphene/h‐BN/GaSe Metal–Insulator–Semiconductor Field‐Effect Transistor (MISFET)

Abstract

2D transition metal chalcogenides (TMCs) and dichalcogenides (TMDCs) are promising candidates for next‐generation electronic devices and sensors. Herein, the fabrication and characterizations of back‐gated Si/SiO2/GaSe‐based (GaSe: gallium selenide) metal–oxide–semiconductor field‐effect transistors (MOSFETs) and top‐gated Gr/h‐BN/GaSe‐based (h‐BN: hexagonal boron nitride) metal–insulator–semiconductor field‐effect transistors (MISFETs) with a common active layer (GaSe) are reported. The morphological, electrical, and optoelectronic properties are investigated, and the device is found to exhibit p‐type behavior with good electrical tunability. At a laser power of 1.147 μW, the device exhibits a photoresponsivity of 90 mA W−1, ION/IOFF ratios exceeding 104, and long decay times. These promising experimental results can promote the application of GaSe‐based MISFETs in multifunctional electronic devices.