Abstract
A quantum point contact is formed whose confining potential is controlled in addition to the electron density. Split-gate contacts are etched from a highly p-type doped epitaxial GaAs surface layer, and a Schottky-type top and centre gate is inserted using a thin calixarene resist layer as insulator. In this way, the energy separation between the lowest one-dimensional subbands can be tuned from 5.5 to 10 meV.
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