Abstract
We report on a green, dual emissive quantum-dot light-emitting diode (QLED) using alumina (Al)-doped ZnO (AZO) to adjust the band offset between the cathode and QD-emitting layers. The dual emissive QLED structure was designed by enhancing the efficient hole injection/transfer and slowing down the electron injection/transfer from AZO to the QD. The QLEDs presented a maximum luminance of 9450 cd/m2, corresponding to a power efficiency of 15.7 lm/W, a current efficiency of 25.5 cd/A, as well as a turn-on voltage of 2.3 V. It is worth noting that the performance of the dual emissive QLED is comparable to that of a single emissive QLED. Therefore, there is a 1.3-fold enhancement in the performance of the QLED based on the AZO cathode due to the balanced charge injection/transfer.
Highlights
The schematic structure and corresponding energy level for the dual emissive device are displayed in Figure 1a,b, respectively
The dual emissive device contained the structure of indium tin oxide (ITO)/poly(ethylenedioxythiophene):polystyrene sulphonate (PEDOT):PSS-GO/TFB/QD/ZnO/Al-doped ZnO (AZO)
A patterned ITO acts as the anode, PEDOT:PSS-GO stands for graphene-doped poly(ethylenedioxythiophene):polystyrene sulphonate (PEDOT:PSS-GO) as the HIL, poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4-(N(4-sec-butylphenyl)) diphenylamine)] is denoted by TFB as the HTL, the QD is formed with 4 to 5 closely packed monolayers as the emissive layer (EM), ZnO is the ETL, and AZO is the cathode
Summary
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