Abstract
Have one ever seen a semiconductor that can issue two-color lasing lines? The diluted magnetic semiconductor (DMS) can do this. Here, we have observed dual lasing lines of 530 nm and 789 nm from a DMS structure of CdS:NiI, in which the excitonic magnetic polaron (EMP) and localized excitonic magnetic polaron (LEMP) are excitations out of ferromagnetic (NiS)x nanocluster and NiI2 nanoclusters within CdS lattice; both of them could lead to the collective EMP state at high excitation and therein produce coherent emission lines simultaneously. This occurrence is due to the superposition of EMP near CdS bandedge and the combination of the charge-transfer band of (NiI)n cluster with the LEMP within CdS lattice by overcoming the strong electron correlation of NiI cluster in a DMS structure, evidenced also by ab initio calculation. This finding opens a way to understand the collective behaviour of spin-coupled excitons in DMS and to find novel applications in the spin-related quantum technology.
Highlights
Lasing from semiconductor structures often comes from the exciton-exciton interactions [1], electron-hole plasma [2], and exciton-polaritons [3] near their bandedge, whose advancement makes modern technology powerful and people’s lives colorful
In contrast to the photon binding in an optical cavity, the local spontaneously ferromagnetic moments or coupled spins in a diluted magnetic semiconductor (DMS) structure supplied another choice to bind excitons to the collective excitonic magnetic polaron (EMP) formation for single-mode lasing [6, 7]
The morphology of doped samples seemed to be affected by the initial precursors [34] but no significant changes
Summary
Lasing from semiconductor structures often comes from the exciton-exciton interactions [1], electron-hole plasma [2], and exciton-polaritons [3] near their bandedge, whose advancement makes modern technology powerful and people’s lives colorful. For photons with different energies or modes, as a boson, their varied modes may dominate and propagate in the same area at the same time in semiconductor optical cavity due to different excitons therein [5]. This is just like the excitons bound by the specific photon with fixed polarization in the microcavity, in which exciton coupling with photon can lead to exciton-polariton in the coupled exciton lattice structure [15] with potential multiline lasing. Can the composites of EMPs behave like the cavity photons binding with more excitons to produce different lasing lines? Can the composites of EMPs behave like the cavity photons binding with more excitons to produce different lasing lines? Until now, such lasing multilines by EMPs still did not come up in a semiconductor structure at the same time with minor temperature dependence
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