Abstract

A surface micromachining fabrication scheme based on organic sacrificial layers and dry-release in oxygen plasma is presented. Free-standing metal structures are formed using conventional photoresists as a sacrificial layer on which a metal structural layer is evaporated and patterned. Structures are subsequently dry-released in an oxygen plasma. For the HPR504 and HiPR6517 photoresists, the lateral under-etching rate (power 1000 W) of about 1 μm/min was found. The presented dry-release technique is fully compatible with standard silicon IC processing and can be applied as an post-processing process module. The technique eliminates any sticking problem and simplifies the processing.

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