Abstract
SF6 dry post-etch treatment after contact hole etching has been compared with both NF3 and CF4+O2 post-etch treatment (PET) through measurement of electrical characteristics. It is found that SF6 PET produces the smallest contact resistance at 0.2 µ m contact hole. This phenomenon is analyzed by using secondary ion mass spectroscopy (SIMS) and atomic force microscopy (AFM). According to SIMS analysis, the removal effect of the contaminative carbon and fluorine is almost the same for the three types of PETs. AFM results show that the surface roughness of the contact hole bottom after SF6 PET is the greatest among the three different PETs. This indicates that SF6 PET is very effective in reducing the contact resistance by increasing the surface area of contact hole bottom, since resistance decreases with increasing surface area.
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