Abstract
Silicon dioxide growth in dry oxygen has been investigated on a CVD-SiO2/thermal-SiO2/Si multilayer structure at 900°C and 1000°C. Borophosphosilicate glass (BPSG), phosphosilicate glass (PSG) and nondoped silica glass (NSG) have been used as the CVD-SiO2 layers. The growth rate of thermal SiO2 under a CVD layer increases in the order of NSG, PSG and BPSG. The oxide grown under the BPSG layer is even thicker than thermal-SiO2/Si without a CVD layer. A new enhanced oxidation model, which takes into account the liquidlike nature of BPSG and PSG during oxidation, is proposed to explain the experimental results.
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