Abstract
A completely dry ex situ cleaning process based on oxidation and HF vapor exposure for removal of residual C and oxide, respectively, from [the silicon‐terminated surface of SiC] 6H‐SiC surfaces to levels equivalent to or better than conventional wet chemical ex situ processing has been demonstrated. X‐ray photoelectron spectroscopy (XPS) of surfaces exposed to UV‐generated ozone revealed the formation of carbon and silicon oxides, as indicated by the broad Si‐O Si 2p peak at 102.4 eV (full width at half‐maximum = 2.1 eV) and a shift in the surface C 1s peak from 283.6 to 284.2 eV, respectively. Evidence for a reduction in the amount of surface C was shown by an increase in the ratio of the SiC C peak to the surface C peak from 0.8 to 2.7 after the treatment. Removal of the silicon oxide via exposure to the vapor from a 10:1 buffered HF solution was indicated by the absence (below the XPS detection limit) of the Si‐O Si 2p peak at 102.4 eV. However, this last process results in a F‐terminated surface. © 1999 The Electrochemical Society. All rights reserved.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
