Abstract
Abstract This paper describes etching of polycrystalline diamond films by reactive ion etching (RIE) in an O2 plasma. The RIE patterned films showed anisotropic etching profiles. During RIE, columnar structures were created on the etched surface., Changes in r.f. power and total pressure had no influence on the formation of columns, nor had changes in film resistivities due to different diborane concentrations during film deposition. However, if SF6 was added to the O2 plasma the formation of columns could be suppressed. In this case the silicon substrate was also attacked. X-ray photoelectron spectroscopy analysis of a film etched in O2 showed that aluminum and fluorine from the reactor walls deposited onto the film during etching could play a role in the formation of the columns.
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