Abstract
The dry etching characteristic of Al1.3Sb3Te film was investigated by using a CF4/Ar gas mixture. The experimental control parameters were gas flow rate into the chamber, CF4/Ar ratio, the O2 addition, the chamber background pressure, and the incident RF power applied to the lower electrode. The total flow rate was 50 sccm and the behavior of etch rate of Al1.3Sb3Te thin films was investigated as a function of the CF4/Ar ratio, the O2 addition, the chamber background pressure, and the incident RF power. Then the parameters were optimized. The fast etch rate was up to 70.8 nm/min and a smooth surface was achieved using optimized etching parameters of CF4 concentration of 4%, power of 300 W and pressure of 80 mTorr.
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