Dry Etching of Nanosized Ge<SUB>1</SUB>Sb<SUB>2</SUB>Te<SUB>4</SUB> Patterns Using TiN Hard Mask for High Density Phase-Change Memory

Abstract

Being able to pattern and etch chalcogenide materials in nanometer scale is essential for the integration of high density chalcogenide random access memory. We investigated dry etching methods for the patterning of Ge1Sb2Te4 films in CHF3/O2 gas mixture using reactive-ion etching system. The gas species CHF3/O2 can reach good etched features with smooth sidewall and a taper angle of 86 degrees. The nanosized Ge1Sb2Te4 patterns were defined by electron-beam lithography using hydrogen silsesquioxane as negative type e-beam resist. A hard mask of TiN, to which the selectivity of Ge1Sb2Te4 is as high as 12, was chosen for employing a CHF3/O2 gas mixture for Ge1Sb2Te4 etching. The Ge1Sb2Te4 line with width of 170 nm could be successfully obtained with good profiles and uniformity using these optimized patterning conditions, which could be very helpful for fabricating high density chalcogenide random access memory based on Ge1Sb2Te4.