DRY ETCHING OF HIGH-K DIELECTRIC PZT STACKS FOR INTEGRATED PASSIVE DEVICES

Abstract

ABSTRACT Integrated passive devices (IPDs) play an important role in an increasing number of consumer electronic applications that require low cost, small size, and reduced component count. A new generation of IPDs based on high density capacitor stacks of PZT (lead zirconium titanate) dielectric thin films is moving from pilot to mass production using advanced dry plasma etch technology. The new materials involved in the process flow place special demands for a multi-step etch approach free from re-deposition and compatible with photoresist masks. Aspects of the process optimization and production implementation are presented in this paper.