Abstract
A comparative study of the important problem of dry etching AlN by an ion beam has been carried out. The etching rate as a function of the parameters of the process has been determined for layers deposited by vapor-phase epitaxy and by magnetron sputtering. It is shown possible to form a specified relief (systems of mesa stripes) in AlN layers. It is demonstrated that this method can be used for smoothing the AlN surface.
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