Abstract
The attenuated phase-shifting mask (Att. PSM) is one of the most useful technologies for deep sub-micron lithography. However, several critical mask parameters including critical dimension (CD), sidewall slope and morphology affect the phase-shift layer (MoSiON). In this work, the effects of added Cl2 gas and dc bias voltage in inductively coupled CF4-based plasma were studied. As results of our experiment, the most vertical profile and smoothest surface were obtained at 10 sccm Cl2 and -200 V dc bias. By increasing the dc bias voltage, the undercut of the MoSiON layer decreased. As Cl2 gas increased in the CF4/O2/He plasma, surface roughness decreased but the edge of the Cr slope was damaged at 15 sccm Cl2. It is suggested that the pattern profile and surface roughness of the MoSiON layer can be controlled by both the quantity of Cl2 gas and the dc self-bias voltage.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
