Abstract
The authors report on the dry etching rates of highly doped, n- and p-type AlxGa1-xAs in PCl3/Ar, CCl2F2/Ar and CH4/H2/Ar electron cyclotron resonance plasmas. These etching rates are independent of doping level and conductivity type for all three gas mixtures, and a significant dependence of etch rate on AlAs mole fraction is observed only with CCl2F2/Ar. The formation of high resistivity layers by oxygen or hydrogen ion bombardment was also investigated as a function of implant dose, Al composition and post-implant annealing temperature. Approximately 10 electrons or holes were removed from the conduction process for each 120 keV O+ ion, whereas a 40 keV proton removed about 0.3 carriers per ion. Sheet resistances above 108 Omega Square Operator -1 are obtainable for heavily doped n- or p-type AlGaAs provided the oxygen or proton doses are sufficiently high.
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