Abstract
The droop property of blue GaN light emitting diodes (LEDs) has been improved by creating a 9 quantum well (QW) LED on a patterned sapphire substrate (PSS). The droop ratio was improved from 45.9 to 7.6%. At a wavelength of 447 nm, and with standard on-header packaging, the 9QW PSS-LED had an output power of 27.6 mW and an EQE of 49.7% at a current of 20 mA. The output power of the 9QW PSS-LED remains linear with increasing drive current, even up to relatively high current density, and the EQE is almost constant.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
