Abstract
Residual image is a frequent issue in active-matrix organic light-emitting diode (AMOLED) display, due to hysteresis effects of the internal devices. Up to now, some optimized methods have been researched mainly from process perspective. However, the approaches from driving scheme perspective and their electrical mechanism have rarely been demonstrated systematically. In this work, a technical proposal has been proposed to separate the influences of different devices including both thin film transistors (TFTs) and OLEDs furtherly. It was found that the current curve gap was nearly equal to the luminance curve gap and the main factor of residual image was shown to be the hysteresis of TFTs. An equivalent circuit of two thin film transistors and one capacitor (2T1C) was also adopted to substantiate the influences of threshold voltage (Vth) compensation for reducing residual image, and a series of experiments of tuning capacitance were carried out for corresponding compensation improvements. Moreover, other driving scheme optimizations were also studied to reduce residual image furtherly, including increasing the data input time and resetting the driving TFTs. The research opens the possibility of considering reduction of residual image from driving scheme perspective and more systemic analysis from the internal electrical mechanism in AMOLED display.
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