Abstract
AbstractBi‐mode Insulated Gate Transistor (BIGT), owing to its notable attributes in power density and compact dimensions, holds promising applications in the realm of high power converters. However, its characteristic of the voltage drop in diode mode controlled by gate‐emitter voltage poses significant challenges for low‐loss operation. This paper investigates the relationship between BIGT's on‐state voltage drop in diode mode and its gate‐emitter voltage in detail. By combining simulation and experimental analysis, recommended the gate‐emitter voltage values are provided. Furthermore, a novel driver optimization scheme is proposed to automatically lower the gate voltage during reverse conduction, which can effectively reduce the reverse on‐state losses of the BIGT. Experimental validation demonstrates a 10.6% reduction in reverse on‐state voltage drop, showcasing the efficacy of the proposed driver optimization scheme.
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