Abstract
Avalanche multiplication of the 0.4-μm-thick a-Se HARP (High-gain Avalanche Rushing amorphous Photoconductor) target was obtained at a high electric field. To study the drift velocity of hot carriers in the a-Se layer, the energy-and field-dependent energy relaxation length was considered in the lucky-drift model. The impact ionization energyEIof 2.0 eV and the optical phonon energyћωof 31 meV for a-Se were used to obtain the impact ionization parameters in the a-Se layer. The drift velocity of hot carriers at 1×108V/m in the 0.4-μm-thick a-Se HARP target was obtained as 1.87×106cm/s. The drift velocity of hot carriers saturates as the electric field and the avalanche multiplication factor increase. In the 0.4-μm-thick a-Se HARP target, the relaxation length ratioλE/λand the relaxation time ratioτE/τsaturate as the avalanche multiplication factor increases. In addition, the relaxation length ratioλE/λand the relaxation time ratioτE/τat 1×108V/m were 2.75 and 14.66, respectively.
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