Drift velocity and the rate of carrier scattering energy in Sb-containing heterostructure lasers

Abstract

Using the Monte Carlo method, I theoretically investigated drift velocity as a function of electric field in Sb-containing heterostructure lasers of In0.545Ga0.455As0.238Sb0.762/AlxGa1-xAszSb1-z and In0.545Ga0.455As0.255Sb0.745/InxAlyGa1-x-yAszSb1-z. In the case of the quaternary alloy barriers of AlxGa1-xAszSb1-z,, effects were predicted of modeled variations in the Aluminum fraction on the relationship between drift velocity and the applied electric field. The calculations indicated that drift velocity and electron mobility should decrease if the fraction increases. In the case of quinary alloy InxAlyGa1-x-yAszSb1-z barriers, the mathematical models predicted that electron drift velocity should increase linearly as the Indium fraction increases. This may be because the Indium fraction determines the depth of the quantum well, which influences Auger recombination lifetime and the probability of inducing the resonant Auger process of carriers. In considering the rate of carrier scattering energy, I explored the changing rate of LO phonon response in quinary barriers as a function of phonon wavevectors with the temperatures of hot electrons.