Abstract
We present an electrothermal drift–diffusion model for organic semiconductor devices with Gauss–Fermi statistics and positive temperature feedback for the charge carrier mobilities. We apply temperature-dependent Ohmic contact boundary conditions for the electrostatic potential and discretize the system by a finite volume based generalized Scharfetter–Gummel scheme. Using path-following techniques, we demonstrate that the model exhibits S-shaped current–voltage curves with regions of negative differential resistance, which were only recently observed experimentally.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have