Drift of electrons and impurity atoms by induced laser radiation in semiconductor crystals

Abstract

Results of experimental researches of some features of drift of electrons and impurity atoms are given at an irradiation of semiconductor crystals by powerful laser radiation. It is shown, that drift of electrons causes major change of an exponent of a refractive in the field of an exit of laser beam from semiconductor crystals, is the parent of infringement of the complete interior reflection, and also gives in scanning powerful nano- and picosecond laser pulses after pass through a surface of the complete interior reflection of crystals CdSSe and ZnSe.Drift of impurity atoms immersing not only gives laser radiation in changes of spectrums of a luminescence by miscellaneous on input and output surfaces of the transparent semiconductors, but also can cause an exit of impurity atoms on a surface. This result is received at an irradiation by the continuous CO2 laser of group of crystals ZnSe.Results of experimental researches of some features of drift of electrons and impurity atoms are given at an irradiation of semiconductor crystals by powerful laser radiation. It is shown, that drift of electrons causes major change of an exponent of a refractive in the field of an exit of laser beam from semiconductor crystals, is the parent of infringement of the complete interior reflection, and also gives in scanning powerful nano- and picosecond laser pulses after pass through a surface of the complete interior reflection of crystals CdSSe and ZnSe.Drift of impurity atoms immersing not only gives laser radiation in changes of spectrums of a luminescence by miscellaneous on input and output surfaces of the transparent semiconductors, but also can cause an exit of impurity atoms on a surface. This result is received at an irradiation by the continuous CO2 laser of group of crystals ZnSe.