Abstract
The drift mobility for in-plane conduction in a-Si:H nipi multilayers has been evaluated from steady-state photoconductivity and effective lifetime measurements. The enhanced drift mobility, which is limited by hopping conduction, is observed at low temperatures. Its magnitude depends on the undoped layer thickness and the maximum value at 100 K is higher than that of an n-type single layer by about three orders of magnitude. This will come from the difference in excess-carrier population at tail states between the n-type layer in nipi multilayers and the n-type single layer.
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