Abstract
The conductivity and the drift mobility of La0.5Sr0.5CoO3 films deposited on fused silica substrates at 650 °C by pulsed-laser deposition have been measured by using the traveling-wave method. At room temperature, La0.5Sr0.5CoO3 films with semiconductivity have a hole density of 1×1021 cm−3, and drift mobility of 0.01 cm2/V s. The films underwent a paraferromagnetic transition around 240 K. The hopping process and tunneling effect of small polarons may be responsible for the conductive behavior above the Curie temperature.
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