Abstract
AbstractPhotocurrent transients were measured at the two polar surfaces of ZnO single crystals with an experimental arrangement of the TOF technique. The slopes of initial decays of photocurrent became steeper with the applied voltages. The change in transit time must be responsible for the change in the shape of photocurrent transient. Absolute values of mobility are estimated for photocarriers generated at the Zn‐surface and the O‐surface. Large slow photocurrent was observed for carriers generated at the O‐surface. It is plausible that there exist trap levels with high density at the O‐surface. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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