Abstract
Steady-state photoconductivity and response-time measurements have been used to determine the influence of carbon alloying on the carrier drift mobility of hydrogenated amorphous silicon samples. While the expected decrease of the mobility with increasing carbon content is generally seen, the opposite sometimes occurs in regions where thermal quenching of the photoconductivity is observed. An explanation can be formulated in terms of recent proposals that a photocarrier sign reversal take place in the quenching region. The implication of this model for the standard interpretations of drift-mobility data sets is pointed out.
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