Drift mobility in a-Se 1- xTe x/Se double-layer xerographic photoreceptors

Abstract

Time-of-flight experiments were carried out to determine the drift mobility μ of charge carriers in a-Se 1- x Te x /Se double-layer Xerographic photoreceptors. The addition of tellurium to amorphous selenium (a-Se) in the range 0–10 wt.% progressively decreases both hole and electron drift mobilities in the charge generation layer of these photoreceptors. For tellurium concentrations greater than about 10 wt.% the electron drift mobility μ e decreases further while the hole drift mobility μ h gradually increases. These results are interpreted in terms of tellurium-induced shallow traps.