Drift mobility and kinetics of transport of excess charge carriers in glassy CdGexAs2

Abstract

We tried to measure transient conductivity response to pulse strongly absorbed excitation (light, accelerated electrons) in sandwich type samples of glassy CdGexAs2 compounds. We observed the signal due to transport of free excess carriers. From analysis of experimental results we conclude that in our materials strong trapping effects are present, so the range of excited carriers is very short (10−4-10−3 cm) even in the highest electrical fields used (to 104 V. cm−1). Estimates of upper limit of drift mobility give the values 10−1- 1 cm2 V−1 sec−1. We did not succeed in determining the type of carriers which are responsible for the observed effects.