Abstract
It has been very difficult to etch deep silicon via with photo-resist (PR) during deep reactive ion etching (DRIE) process because of the erosion of PR and the formation of vertical striations. The effects of RF source power and PR pattern size were researched on the etch rate, via top size and etch depth. The PR mask patterns with 10 μm thickness were composed of 10, 20, 30 and 40 μm squares. The etch rates and the etch profiles of deep silicon vias were monitored by the cross sectional FE-SEM images. As the RF source power and PR pattern size were increased, we obtained higher etch rate and deeper etch profiles. However, we observed the vertical striations at the surface of deep silicon vias at higher RF source power.
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