Abstract
Abstract In this paper, analytical drain current modeling of proposed Dual Material (DM) Elliptical Gate-All-Around (GAA) Heterojunction TFET is developed considering depletion regions at both source/channel and drain/channel junctions. Initially, channel potential is derived and is used to calculate the electric field. Based on formulated expression of electric field, a compact drain current model is introduced applying Kane's approach. The device performance is then investigated by varying device parameters including gate material workfunctions, metal length ratios, channel length along with implementation of different gate dielectrics and heterojunction materials to explore its response to channel potential, electric field, drain current and ambipolar characteristics. All the analytical results are compared with Sentaurus simulated data to corroborate our derived model.
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