Abstract
We present a rigorously derived current solution for undoped double-gate (DG) MOSFETs with two carriers, which is based on surface potentials. The third-order Newton–Raphson (NR) method is used to solve the surface-potential equations resulting from the application of the boundary conditions to the general Poisson solution, with an initial guess very close to the true solution. The results demonstrate surface-potential solutions for DG MOSFETs with 2–7 iterations to achieve an accuracy of 10−15. The drain current model for two carriers is presented as a benchmark to test the accuracy of one-carrier current approximation. © 2014 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.
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