Drag resistivity in bilayer-graphene/GaAs coupled layer system with the effect of local field corrections

Abstract

Drag resistivity mediated by Coulomb interaction is a transport phenomenon in a specially separated bilayer systems. The drag resistivity is numerically analysed for both the n- and p-type charge carriers between the bilayer-graphene and a GaAs layer, with an insulating barrier by using random phase approximation (RPA). The RPA method does not include exchange and correlation effects, which are included by assuming the local field correction (LFC) in effective interactions. Because of the LFC effects, the drag resistivity is found enhanced compared to the measured results of RPA. The present bilayer system shows a comparison between effect of electron–electron (e–e) repulsive and electron–hole (e–h) attractive interactions in Boltzmann regime for low temperature limit. Different masses of electrons and holes in GaAs layer are analysed, and drag resistivity is increased on increasing the effective mass of the charge carriers. The dependency of drag resistivity on temperature, concentration, interlayer separation, width of the drag layer and dielectric constant of barrier shows a consistent behaviour.