Abstract

Deposited titanium oxide thin films are used as optical protector films for several materials and as energy converters for solar cells. In this work, titanium oxide thin films are deposited on c‐Si and glass substrates by reactive radiofrequency sputtering. All the deposits are grown at ambient temperature and the sputtering gas is a mixture of oxygen and argon with an overall pressure of 10−2 mbar. The oxygen partial pressure ratios varies from 5% to 20%.Characterization of deposited films is made by grazing incidence X‐ray diffraction (GIXD), grazing incidence X‐ray reflection (GIXR), X‐ray photoemission spectroscopy (XPS) and optical transmission spectroscopy. The characterization results reveal that deposited films of TiO2 are polycrystalline and present both rutile and anatase phases. The chemical composition of raw films in Ti:O ratio is equal to 1:2.02, and the titanium at surface is completely oxidized. In fact, the Ti2p core level behavior shows that the oxidization state of Ti is equal to +4.The specularily reflected intensity according to incidence angle of the X‐ray on TiO2/glass structure shows one critical angle attributed to the TiO2 film equal to 0.283º. This angle value involves film density between rutile and anatase phases. The optical characterization shows that TiO2 thin films obtained are transparent in visible range, and have a refraction index value equal to 2.45 and when extrapolated to infrared range, it is equal to 2.23. The value of gap energy (3.35 eV) is deduced from variation of absorption coefficient versus incident radiation energy.

Highlights

  • Le dioxyde de titane (TiO2) est un materiau tres sollicitepour ses proprietes optiques, mecaniques et electroniques

  • Pour determiner l’effet de la methode d’elaboration sur les proprietes optiques des films minces de TiO2, Bennet & al. [8] ont utilisedifferentes techniques

  • Pour determiner les caracteristiques structurales, electroniques et optiques des couches minces du dioxydes de titane (TiO2) nous avons utiliseun ensemble de techniques d’analyses complementaires: la diffraction des rayons X en incidence rasante, la reflectometrie des rayons X et les spectroscopies de photoemission X et de transmission optique

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Summary

INTRODUCTION

Le dioxyde de titane (TiO2) est un materiau tres sollicitepour ses proprietes optiques, mecaniques et electroniques. La plus part des travaux anterieures portent essentiellement sur les films de TiO2 cristallises dans la phases anatase ou dans la phase rutile. La cristallisation dans l’une des deux phase necessite des conditions tres particulieres de la pression partielle d’oxygene, de la temperature et de la vitesse de depot ainsi que de la temperature de recuit. La principale motivation du present travail est l’exploration des proprietes electroniques, structurales et optiques des depots en couches minces de TiO2 en presence des deux phases anatase et rutile. La reflectometrie et la diffraction des rayons X en incidence tres rasante ont eteutilisees simultanement pour la caracterisation des couches minces de TiO2. La reflectometrie des rayons X, quant aelle, nous a permis d’atteindre d’une facon precise la densiteet l’epaisseur de nos couches

PROCE DURE EXPE RIMENTALE
Etude Par la Diffraction Des Rayons X en Incidence Rasante
Etude Par la Reflectrometrie Des Rayons X
Etude Par la Spectroscopie de Photoemission X
Etude Par la Spectroscopie de Transmission Optique
CONCLUSION
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